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Scalability in the XFS File System
TLDR
We describe the architecture and design of a new file system, XFS, for Silicon Graphics' IRIX operating system. Expand
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A 150-215 GHz InP HEMT low noise amplifier with 12 dB gain
  • R. Grundbacher, R. Raja, +7 authors A. Oki
  • Physics
  • International Conference on Indium Phosphide and…
  • 8 May 2005
We present a 150-215 GHz InP HEMT MMIC with greater than 12dB gain across this band. The MMIC is a 3-stage, single-ended microstrip design implemented using 0.07 mum T-gate InP HEMT MMIC technologyExpand
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Managing Conservation Reliant Species: Hawai'i's Endangered Endemic Waterbirds
Hawai'I's coastal plain wetlands are inhabited by five endangered endemic waterbird species. These include the Hawaiian Coot ('alae ke'oke'o), Hawaiian Duck (koloa maoli), Hawaiian Stilt (ae'o),Expand
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A W-band InGaAs/InAlAs/InP HEMT Low-Noise Amplifier MMIC with 2.5dB noise figure and 19.4 dB gain at 94GHz
  • X. Mei, C.H. Lin, +7 authors R. Lai
  • Materials Science
  • 20th International Conference on Indium Phosphide…
  • 25 May 2008
A three-stage W-band InGaAs/InAlAs/InP HEMT Low-Noise Amplifier (LNA) has been fabricated with 0.1mum EBL gate and improved Ohmic contact. A noise figure of 2.5 dB with an associated gain of 19.4 dBExpand
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Compact ka-band bi-directional amplifier for low-cost electronic scanning array antenna
TLDR
An innovative transceiver compaction technique is introduced to address the high manufacturing cost associated with a large-aperture phased array. Expand
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Highly linear and compact MMW phased array transmitters [MMIC power amplifiers]
In this paper, we describe more extensive linearity measurements (OIP3, NPR, ACPR) of multistage compact MMIC power amplifiers for future phased array transmitters at MMW frequencies. As an example,Expand
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Reliability investigation of 0.07-μm InGaAs-InAlAs-InP HEMT MMICs with pseudomorphic In0.75Ga0.25As channel
The authors have investigated the reliability performance of G-band (183 GHz) monolithic microwave integrated circuit (MMIC) amplifiers fabricated using 0.07-/spl mu/m T-gate InGaAs-InAlAs-InP HEMTsExpand
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Manufacturable and Reliable 0.1 μm AlSb/InAs HEMT MMIC Technology for Ultra-Low Power Applications
This paper describes a manufacturable and reliable 0.1 μm AlSb/InAs MMIC technology for ultra-low power applications. AlSb/InAs HEMTs have been demonstrated with only one-tenth power dissipation ofExpand
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High performance and high reliability InP HEMT low noise amplifiers for phased-array applications
This paper describes the development of a Q-band low noise amplifier unit using a 0.1 /spl mu/m InP HEMT MMICs that has been demonstrated with high RF performance and high reliability over aExpand
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High performance voltage controlled bi-directional amplifiers in support of component reuse for large aperture phase array
The objective of this paper is to provide a novel and innovative solution to reduce the projected high parts count for large aperture phase array (>100,000 elements). Bi-directional amplifiers areExpand
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