Michelle Yvonne Simmons

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As silicon electronics approaches the atomic scale, interconnects and circuitry become comparable in size to the active device components. Maintaining low electrical resistivity at this scale is challenging because of the presence of confining surfaces and interfaces. We report on the fabrication of wires in silicon--only one atom tall and four atoms(More)
In zero magnetic field, conductance measurements of clean one-dimensional (1D) constrictions defined in GaAs/AlGaAs heterostructures show twenty-six quantized ballistic plateaux, as well as a structure close to 0.7(2e/h). In an in-plane magnetic field all the 1D subbands show Zeeman splitting and in the wide channel limit the g-factor is | g |= 0.4, close(More)
The ability to control matter at the atomic scale and build devices with atomic precision is central to nanotechnology. The scanning tunnelling microscope can manipulate individual atoms and molecules on surfaces, but the manipulation of silicon to make atomic-scale logic circuits has been hampered by the covalent nature of its bonds. Resist-based(More)
A defining feature of modern CMOS devices and almost all quantum semiconductor devices is the use of many different materials. For example, although electrical conduction often occurs in single-crystal semiconductors, gates are frequently made of metals and dielectrics are commonly amorphous. Such devices have demonstrated remarkable improvements in(More)
Nanoscale control of doping profiles in semiconductor devices is becoming of critical importance as channel length and pitch in metal oxide semiconductor field effect transistors (MOSFETs) continue to shrink toward a few nanometers. Scanning tunneling microscope (STM) directed self-assembly of dopants is currently the only proven method for fabricating(More)
In this paper we demonstrate the fabrication of multiple, narrow, and closely spaced δ-doped P layers in Ge. The P profiles are obtained by repeated phosphine adsorption onto atomically flat Ge(001) surfaces and subsequent thermal incorporation of P into the lattice. A dual-temperature epitaxial Ge overgrowth separates the layers, minimizing dopant(More)
Three-dimensional (3D) control of dopant profiles in silicon is a critical requirement for fabricating atomically precise transistors. We demonstrate conductance modulation through an atomic scale 3 nm wide δ-doped silicon-phosphorus wire using a vertically separated epitaxial doped Si:P top-gate. We show that intrinsic crystalline silicon grown at low(More)
We investigate the conductance of quantum wires with a variable open quantum dot geometry, displaying an exceptionally strong Kondo effect and most of the 0.7 structure characteristics. Our results indicate that the 0.7 structure is not a manifestation of the singlet Kondo effect. However, specific similarities between our devices and many of the clean(More)
We report conductance measurements of ballistic one-dimensional (1D) wires defined in GaAs/AlGaAs heterostructures in an in-plane magnetic field, B. When the Zeeman energy is equal to the 1D subband energy spacing, the spin-split subband N upward arrow intersects (N+1) downward arrow, where N is the index of the spin-degenerate 1D subband. At the crossing(More)
BACKGROUND Racial disparities in blood pressure control have been well documented in the United States. Research suggests that many factors contribute to this disparity, including barriers to care at patient, clinician, healthcare system, and community levels. To date, few interventions aimed at reducing hypertension disparities have addressed factors at(More)