Learn More
A 45 nm logic technology is described that for the first time incorporates high-k + metal gate transistors in a high volume manufacturing process. The transistors feature 1.0 nm EOT high-k gate(More)
A 14nm logic technology using 2<sup>nd</sup>-generation FinFET transistors with a novel subfin doping technique, self-aligned double patterning (SADP) for critical patterning layers, and air-gapped(More)
A 32 nm generation logic technology is described incorporating 2<sup>nd</sup>-generation high-k + metal-gate technology, 193 nm immersion lithography for critical patterning layers, and enhanced(More)