Michal Leszczynski

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We present transmission electron microscopy (TEM) and x-ray quantitative studies of the indium distribution in In(x)Ga(1-x)N/GaN multiple quantum wells (MQWs) with x = 0.1 and 0.18. The quantum wells were grown by low-pressure metalorganic chemical vapour deposition (LP-MOCVD) on a bulk, dislocation-free, mono-crystalline GaN substrate. By using the(More)
We have investigated the lattice dynamics of a wurtzite GaN single crystal by inelastic x-ray scattering. Several dispersion branches and phonons at high-symmetry points have been measured, including the two zone-center Raman- and infrared-inactive silent modes. The experiments have been complemented by ab initio calculations. They are in very good(More)
F. Tuomisto; 1; 5, T. Suski1, H. Teisseyre1, M. Krysko1, M. Leszczynski1, B. Lucznik1, I. Grzegory1, S. Porowski1, D. Wasik2, A. Witowski2, W. Gebicki3, P. Hageman4, and K. Saarinen5 1 High Pressure Research Center, Unipress, Polish Academy of Sciences, 01-142 Warsaw, Poland 2 Institute of Experimental Physics, Warsaw University, Hoza 69, Warsaw, Poland 3(More)
Magnetic resonance experiments, including optically detected magnetic resonance (ODMR) and electron paramagnetic resonance (EPR), have been performed on Si-doped homoepitaxial GaN layers grown by MOCVD and on high quality, free-standing (B200mm-thick) GaN grown by HVPE. This allowed us to obtain information on the properties of native defects and dopants in(More)
Cathodoluminescence (CL) studies are widely applied in semi-conductor science and technology. However, for structures with a p-n junction the CL spatial distribution can be strongly affected by internal current flows of the electron beam induced current generated within the structure. This influence is the investigated in application to CL studies of(More)
The surface and electronic structure of MOCVD–grown layers of Ga0.92In0.08N have been investigated by means of photoemission. Stability of chemical composition of the surface subjected to Ar ion sputtering was proven by means of X-ray photoemission spectroscopy. The analysis of the relative intensities of In 3d, Ga 3p, and N 1s peaks showed that argon ion(More)
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