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Journals and Conferences
We present optically tunable metamaterials (MMs) on flexible polymer sheets operating at terahertz (THz) frequencies. The flexible MMs, consisting of electric split-ring resonators (eSRRs) on patterned GaAs patches, were fabricated on a thin polyimide layer using a transfer technique. Optical excitation of the GaAs patches modifies the metamaterial… (More)
Related Articles Deep levels in H-irradiated GaAs1-xNx (x<0.01) grown by molecular beam epitaxy J. Appl. Phys. 110, 124508 (2011) Extended x-ray absorption fine structure study of porous GaSb formed by ion implantation J. Appl. Phys. 110, 113528 (2011) Emission spectroscopy of divalent-cation-doped GaN photocatalysts J. Appl. Phys. 110, 113526 (2011)… (More)
Related Articles Near-field dynamics of broad area diode laser at very high pump levels AIP Advances 1, 042148 (2011) Photonic bandstructure engineering of THz quantum-cascade lasers Appl. Phys. Lett. 99, 201103 (2011) Simulation of quantum cascade lasers J. Appl. Phys. 110, 093109 (2011) Ultra-broadband heterogeneous quantum cascade laser emitting from 2.2… (More)
A sinusoidal dependence of the sand p-polarized terahertz (THz) emission on sample rotation angle in mand a-plane InN has been observed using ultrafast pulse excitation at a moderate pump fluence of 1 J/cm. The angular dependence is attributed to carrier drift in an intrinsic in-plane electric field parallel to the c-axis induced by stacking… (More)
We report a novel approach to the design of normal incidence multiple quantum well light modulators. The quantum confined Stark effect is utilized to tune the light polarization rotation and phase retardation created by a thermally induced in-plane anisotropic strain. An exceedingly high contrast ratio of 5000:1 is demonstrated for a normally-on device at… (More)
An HVPE-grown n-InGaN/p-GaN single heterojunction LED with p-side down and emission at ~ 480nm has been demonstrated. Benefits of the p-down geometry for such an LED associated with polarity are discussed.
Photoluminescence lifetime and internal quantum efficiency measurements of deep ultraviolet (∼230 nm) light-emitting diode structures are correlated to packaged devices and compared to measurements on more mature 280 nm structures.
We report the excitation wavelength dependence of terahertz emission from N-face InN/InGaN multiple quantum wells relative to that from bulk N-face InN when excited by femtosecond optical pulses tunable from 800 nm to 1700 nm.
III-Nitride based deep ultraviolet (DUV) light emitting diodes (LEDs) offer smaller size, wider choice of peak emission wavelengths, lower power consumption and reduced cost compared to mercury vapor lamps and other UV light sources. Increasing efficiency of DUV LEDs accelerates their applications in bio-agent detection, analytical instrumentation,… (More)
III-Nitride/SIC separate absorption and multiplication avalanche photodiodes (SAM APDs) provide a new approach for realizing high sensitivity, high gain and low dark current detectors with a response that is tunable over a wide spectral range. However, the heterojunction interface plays a significant role in the performance of these detectors due to… (More)