Michael W. Petras

Learn More
A broadband scalable lumped-element model for multiport transformers integrated on a silicon substrate is presented. The model is based on a pi-T network for the primary and secondary coils and utilizes only frequency-independent elements to model the frequency-dependent resistive losses. Four-port S-parameters are measured for multiport transformers up to(More)
Skyrocketing growth in the cellular personal communications services (PCS) sector has fueled the needs for higher density, more functionality, and greater performance on both handset and basestations. Third generation wireless standards, which require hardware upgrades, loom on the horizon. RF component suppliers are scrambling to find solutions at the IC,(More)
New compact model forms for two-port and three-port symmetric inductors fabricated on silicon are discussed in this paper. These new models incorporate a frequency independent RL network that mimics the skin effect behavior of transmission lines on conductive substrates and can accurately predict the inductive behavior as well as the one-port single-ended(More)
The paper discusses the design and characterization of RF filters in Freescale's 0.4 micron SiGe BiCMOS process. An integration scheme for bandpass filters on a standard silicon substrate using monolithic transformers is presented. A 1.9 GHz filter using a single transformer as well as its dual, where the transformer is replaced by three inductors, is(More)
Metal thin film resistors have been integrated into a damascene-copper multilayer metallization system for mixed-signal BiCMOS technology platforms. The thin film process can be adjusted to achieve resistors with very low temperature coefficients, high linearity, low noise, and improved matching as compared to resistors based on implanted silicon or(More)
  • 1