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In this paper we propose a new Built in Current Sensor (BICS) to detect single event upsets in SRAM. The BICS is designed and validated for 100nm process technology. The BICS reliability analysis for process, voltage, temperature, and power supply noise are provided. This BICS detect various shapes of current pulses generated due to particle strike. The(More)
IC technologies are approaching the ultimate limits of silicon in terms of channel width, power supply and speed. By approaching these limits, circuits are becoming increasingly sensitive to noise, which will result on unacceptable rates of soft-errors. Furthermore, defect behavior is becoming increasingly complex resulting on increasing number of timing(More)