Michael L. Alles

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  • En Xia Zhang, A K M Newaz, Bin Wang, Shweta Bhandaru, C Xuan Zhang, Daniel M Fleetwood +7 others
  • 2011
—We have evaluated the responses of graphene materials and devices to 10-keV X-ray irradiation and ozone exposure. Large positive shifts are observed in the current-voltage characteristics of graphene-on-SiO 2 transistors irradiated under negative gate bias. Moreover, significant radiation-induced increases are found in the resistance of suspended graphene(More)
  • Kai Ni, En Xia Zhang, Nicholas C Hooten, William G Bennett, Michael W Mccurdy, Andrew L Sternberg +7 others
  • 2014
—The single-event-transient response of InGaAs MOS-FETs exposed to heavy-ion and laser irradiations is investigated. The large barrier between the gate oxide and semiconductor regions effectively suppresses the gate transients compared with other types of III-V FETs. After the initial radiation-induced pulse, electrons and holes flood into the channel(More)
  • Citation Gadlage, M J, Matthew J Gadlage, Jonathan R Ahlbin, Vishwanath Ramachandran, Pascale Gouker +11 others
  • 2009
Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. The MIT Faculty has made this article openly available. Please share how this access benefits you. Your story matters. Abstract—Factors that affect single-event transient pulse widths, such as(More)
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