Michael L. Alles

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Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. The MIT Faculty has made this article openly available. Please share how this access benefits you. Your story matters. Abstract—Factors that affect single-event transient pulse widths, such as(More)
—We have evaluated the responses of graphene materials and devices to 10-keV X-ray irradiation and ozone exposure. Large positive shifts are observed in the current-voltage characteristics of graphene-on-SiO 2 transistors irradiated under negative gate bias. Moreover, significant radiation-induced increases are found in the resistance of suspended graphene(More)
The radiation response of a 0.25 µm silicon-on-sapphire CMOS technology is characterized at the transistor and circuit levels utilizing both standard and enclosed layout devices. The threshold-voltage shift is less than 170 mV and the leakage-current increase is less than 1 nA for individual standard-layout nMOSFET and pMOSFET devices at a total dose of 100(More)
ii ACKNOWLEDGEMENTS I would first of all like to thank Dr. Schrimpf for his continual support, confidence, and guidance throughout this project. Not only has Dr. Schrimpf been a tremendous source of assistance and encouragement, but I would not even be a graduate student if it were not for Dr. Schrimpf's quick responses to my numerous e-mails, and his(More)
Professor Sokrates T. Pantelides ii ACKNOWLEDGMENTS I would first of all like to thank my husband Pierre who has been supportive and patient with me on my journey of attaining a Ph.D. He believed in me even when I did not believe in myself, he listened countless times to my presentations and helped me perfect them. I would also like to thank my parents and(More)