Michael J. Zierak

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This paper provides a detailed description of the IBM SiGe BiCMOS and rf CMOS technologies. The technologies provide high-performance SiGe heterojunction bipolar transistors (HBTs) combined with advanced CMOS technology and a variety of passive devices critical for realizing an integrated mixed-signal system-on-a-chip (SoC). The paper reviews the process(More)
In this paper, we introduce an isolated RF LDMOS NFET is for RF Power Amplifier (PA) and power management applications. The RF LDMOS NFET has demonstrated a drain-source turn-on resistance (R<sub>ds,on</sub>) of 1.45ohm-mm, a cutoff frequency (Ft) greater than 40GHz and a drain-source breakdown down voltage (BV) in excess of 9V. For PA designs, the(More)
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