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Foundation of rf CMOS and SiGe BiCMOS technologies This paper provides a detailed description of the IBM SiGe BiCMOS and rf CMOS technologies. The technologies provide high-performance SiGe heterojunction bipolar transistors (HBTs) combined with advanced CMOS technology and a variety of passive devices critical for realizing an integrated mixed-signal(More)
In this paper, we introduce an isolated RF LDMOS NFET is for RF Power Amplifier (PA) and power management applications. The RF LDMOS NFET has demonstrated a drain-source turn-on resistance (R<sub>ds,on</sub>) of 1.45ohm-mm, a cutoff frequency (Ft) greater than 40GHz and a drain-source breakdown down voltage (BV) in excess of 9V. For PA designs, the(More)
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