Michael E . Flatté

Learn More
Time-resolved optical measurements in (110)-oriented GaAs/AlGaAs quantum wells show a tenfold increase of the spin-relaxation rate as a function of applied electric field from 20 to 80 kV cm(-1) at 170 K and indicate a similar variation at 300 K, in agreement with calculations based on the Rashba effect. Spin relaxation is almost field independent below 20(More)
The electronic structure near a single classical magnetic impurity in a superconductor is determined using a fully self-consistent Koster-Slater algorithm. Localized excited states are found within the energy gap which are half electron and half hole. Within a jellium model we find the new result that the spatial structure of the positive-frequency(More)
Random, spatially-uncorrelated nuclear hyperfine fields in organic materials dramatically affect electronic transport properties such as the electrical conductivity, photoconductivity, and electroluminescence. The influence of these nuclear hyperfine fields can be overwhelmed by a small (∼ 10 mT) uniform external applied magnetic field, even at room(More)
Lanthanides are vital components in lighting, imaging technologies and future quantum memory applications owing to their narrow optical transitions and long spin coherence times. Recently, diamond has become a pre-eminent platform for the realisation of many experiments in quantum information science. Here we demonstrate a promising approach to incorporate(More)
Magnetic and spin-based technologies for data storage and processing provide unique challenges for information transduction to light because of magnetic metals' optical loss, and the inefficiency and resistivity of semiconductor spin-based emitters at room temperature. Transduction between magnetic and optical information in typical organic semiconductors(More)
We analyze the interaction of a nanomagnet (ferromagnetic) with a single photonic mode of a cavity in a fully quantum-mechanical treatment and find that exceptionally large quantum-coherent magnet-photon coupling can be achieved. Coupling terms in excess of several THz are predicted to be achievable in a spherical cavity of approximately 1 mm radius with a(More)
The discovery of ferromagnetism in Mn-doped GaAs has ignited interest in the development of semiconductor technologies based on electron spin and has led to several proof-of-concept spintronic devices. A major hurdle for realistic applications of Ga(1-x)Mn(x)As, or other dilute magnetic semiconductors, remains that their ferromagnetic transition temperature(More)
The sensitive dependence of a semiconductor's electronic, optical and magnetic properties on dopants has provided an extensive range of tunable phenomena to explore and apply to devices. Recently it has become possible to move past the tunable properties of an ensemble of dopants to identify the effects of a solitary dopant on commercial device performance(More)
The wave function of a hole bound to an individual Mn acceptor in GaAs is spatially mapped by scanning tunneling microscopy at room temperature and an anisotropic, crosslike shape is observed. The spatial structure is compared with that from an envelope-function, effective mass model and from a tight-binding model. This demonstrates that anisotropy arising(More)