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In this article, we study the properties of metal contacts to single-layer molybdenum disulfide (MoS2) crystals, revealing the nature of switching mechanism in MoS2 transistors. On investigating transistor behavior as contact length changes, we find that the contact resistivity for metal/MoS2 junctions is defined by contact area instead of contact width.(More)
Monolayer molybdenum disulfide (MoS2) with a direct band gap of 1.8 eV is a promising two-dimensional material with a potential to surpass graphene in next generation nanoelectronic applications. In this Letter, we synthesize monolayer MoS2 on Si/SiO2 substrate via chemical vapor deposition (CVD) method and comprehensively study the device performance based(More)
For the first time, polyethyleneimine (PEI) doping on multilayer MoS2 field-effect transistors is investigated. A 2.6 times reduction in sheet resistance and 1.2 times reduction in contact resistance have been achieved. The enhanced electrical characteristics are also reflected in a 70% improvement in ON-current and 50% improvement in extrinsic field-effect(More)
Phosphorene is a unique single elemental semiconductor with two-dimensional layered structures. In this letter, we study the transistor behavior on mechanically exfoliated few-layer phosphorene with the top-gate. We achieve a high ON-current of 144 mA/mm and hole mobility of 95.6 cm2/V·s. We deposit Al2O3 by atomic layer deposition (ALD) and study the(More)
High-performance MoS2 transistors scaled down to 100 nm are studied at various temperatures down to 20 K, where a highest drive current of 800 μA μm(-1) can be achieved. Extremely low electrical noise of 2.8 × 10(-10) μm(2) Hz(-1) at 10 Hz is also achieved at room temperature. Furthermore, a negative differential resistance behavior is experimentally(More)
We have demonstrated high-performance InAlN/ GaN MOS high-electron-mobility-transistors (MOSHEMTs) with various channel lengths (Lch) of 85–250 nm using atomiclayer-epitaxy (ALE) crystalline Mg0.25Ca0.75O as gate dielectric. With a nearly lattice matched epitaxial oxide, the interface between oxide and barrier is improved. The gate leakage current of(More)
Experimental demonstrations of one-dimensional (1D) van der Waals material tellurium (Te) have been presented by Raman spectroscopy under strain and magneto-transport. Raman spectroscopy measurements have been performed under strains along different principle axes. Pronounced strain response along the c-axis is observed due to the strong intrachain covalent(More)
Multi-layer black phosphorus has emerged as a strong candidate owing to its high carrier mobility with most of the previous research work focused on its p-type properties. Very few studies have been performed on its n-type electronic characteristics which are important not only for the complementary operation for logic, but also crucial for understanding(More)
metal-oxide-semiconductor field-effect transistors Mengwei Si, Jiangjiang J. Gu, Xinwei Wang, Jiayi Shao, Xuefei Li, Michael J. Manfra, Roy G. Gordon, and Peide D. Ye School of Electrical and Computer Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, USA Department of Chemistry and Chemical Biology, Harvard(More)