Meng-chen Liao

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This paper discusses the influence of source/drain (S/D) bias on negative bias temperature instability (NBTI) in pMOS devices. It is found that with the S/D bias increase, the NBTI degradation is initially reduced, but it increases with higher S/D bias. Two models are presented to explain the underlying mechanisms. One is the graded hydrogen density model,(More)
In this paper, the dynamic negative bias temperature instability (DNBTI) characteristics of p-MOSFET with N-plasma SiON dielectric are studied. Under dynamic stress, the nearly consistent frequency dependent characteristics of threshold voltage shift (DeltaV<sub>th</sub>) and interface trap density (DeltaN<sub>it</sub>) were observed. The results show that(More)
The hydrotalcite with the properties of flame-retardant, eliminating smoke, filling and thermostability is a new kind of inorganic flame retardant. In the work, the MgAl hydrotalcite as flame retardant with Mg/Al molar ratio of 4 (MgAl-LDH) was prepared by using urea as the precipitating agent. The thermolysis behavior of the MgAl-LDH flame retardant was(More)
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