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  • Bo-Yi Chou, Ching-Sung Lee, +6 authors Sheng-min Yu
  • Chemistry
  • IEEE Electron Device Letters
  • 2014 (First Publication: 1 November 2014)
  • High-k TiO<sub>2</sub>-dielectric Al<sub>0.25</sub>Ga<sub>0.75</sub>N/GaN metal-oxide-semiconductor high-electron mobility transistors (MOS-HEMTs) grown on Si substrates by using nonvacuum ultrasonicContinue Reading