Meng-Chieh Liao

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In this paper, the dynamic negative bias temperature instability (DNBTI) characteristics of p-MOSFET with N-plasma SiON dielectric are studied. Under dynamic stress, the nearly consistent frequency dependent characteristics of threshold voltage shift (DeltaV<sub>th</sub>) and interface trap density (DeltaN<sub>it</sub>) were observed. The results show that(More)
Measurements of the curvatures and warpages of a printed circuit board (PCB) during a thermal solder reflow process using strain gauges are proposed in this study. In the experiments, a shadow moiré is used for measuring the out-of-plane deformations (or warpage) of a bi-material plate and a PCB with dual in-line memory module (DIMM) sockets during solder(More)
This paper discusses the influence of source/drain (S/D) bias on negative bias temperature instability (NBTI) in pMOS devices. It is found that with the S/D bias increase, the NBTI degradation is initially reduced, but it increases with higher S/D bias. Two models are presented to explain the underlying mechanisms. One is the graded hydrogen density model,(More)
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