Mei-Kei Ieong

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integrated circuits A. W. Topol D. C. La Tulipe, Jr. L. Shi D. J. Frank K. Bernstein S. E. Steen A. Kumar G. U. Singco A. M. Young K. W. Guarini M. Ieong Three-dimensional (3D) integrated circuits (ICs), which contain multiple layers of active devices, have the potential to dramatically enhance chip performance, functionality, and device packing density.(More)
Introduction MOSFETs with a high-mobility channel are attractive candidates for advanced CMOS device structures, since it is becoming increasingly difficult to enhance Si CMOS performance through traditional device scaling. The lower effective mass and higher mobility of carriers in germanium (Ge) compared with silicon (Si) (2x higher mobility for electrons(More)
We describe a newly developed parallel three-dimensional semiconductor device simulator. The program utilizes the message passing architecture and has been developed on a network of workstations. Two iterative algorithms to solve the nonlinear semiconductor device equations are presented. The algorithms are tested by simulating a three-dimensional MOSFET(More)
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