Mehmet Uzunkol

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This paper presents an ultra low power 60 GHz SiGe ASK receiver capable of 3-6 Gbps communications. The receiver is based on a 4-stage low-noise amplifier and an ASK detector, all in a 0.12 um SiGe transistor technology. The LNA and ASK detector were designed for wide bandwidth in order to result in a very high data rate. The LNA+Detector chip consumes 11(More)
This paper presents a 0.32 THz 4x4 imaging array based on an advanced SiGe technology. Each pixel is composed of a high efficiency on-chip antenna meeting all metal-density rules, which is coupled to a SiGe detector and a low noise CMOS operational amplifier. A quartz superstrate is used on top of the imaging chip to improve the radiation efficiency. The(More)
This paper presents an in-depth study of a 45-nm CMOS silicon-on-insulator (SOI) technology. Several transistor test cells are characterized and the effect of finger width, gate contact, and gate poly pitch on transistor performance is analyzed. The measured peak ft is 264 GHz for a 30 × 1007 nm single-gate contact relaxed-pitch transistor and the(More)
This paper presents an in-depth analysis of an SiGe BiCMOS on-off keying (OOK) receiver composed of a low-noise SiGe amplifier and an OOK detector. The analysis indicates that the bias circuit and bias current have a substantial impact on the receiver and should be optimized for best performance. The LO leakage from the transmitter can also have a(More)
This paper presents low-noise amplifiers (LNA) at 45¿C95 GHz, a frequency doubler at 180 GHz, active and passive mixers at 130¿C180 GHz fabricated in 45-nm Semiconductor-On-Insulator (SOI) CMOS process for digital and mixed-signal applications. The measured ft and fmax of a 30¡A1-¿Im transistor are 200 GHz at 0.3 mA/¿Im current density, referenced to the(More)
This paper presents an ultra low-loss 50-70 GHz single-pole double-throw (SPDT) switch built using standard 90 nm CMOS process. The switch is based on λ/4 transmission lines with shunt inductors at the output matching network. High substrate resistance contacts are used to achieve low insertion loss. The SPDT switch results in a measured insertion loss of(More)
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