Mayukh Bhattacharya

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—This paper describes the incorporation of an accurate physics-based model of the resonant tunneling diode (RTD) into Berkeley SPICE version 3F5 and addresses the related direct current (dc) and transient convergence problems caused by the negative differential resistance (NDR) and the exponential nature of the device characteristics. To circumvent the dc(More)
—In this paper, we present the description and evaluation of a novel physical design tool, BISRAMGEN, that can generate reconfigurable and fault-tolerant RAM modules. This tool, first proposed in [3], designs a redundant RAM array with accompanying built-in self-test (BIST) and built-in self-repair (BISR) logic that can switch out faulty rows and switch in(More)
—Threshold gates consisting of resonant tunneling diodes (RTDs) in conjunction with HBTs or CHFETs or MOSFETs can form extremely compact, ultrafast, digital logic alternatives, and may be used for digital signal processing applications in the near future. The resonant tunneling phenomenon causes these circuits to exhibit super-high-speed switching(More)
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