Maxime Berthe

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III-V antimonide nanowires are among the most interesting semiconductors for transport physics, nanoelectronics and long-wavelength optoelectronic devices due to their optimal material properties. In order to investigate their complex crystal structure evolution, faceting and composition, we report a combined scanning electron microscopy (SEM), transmission(More)
Electronic transport is profoundly modified in the presence of strong electron-vibration coupling. We show that in certain situations, the electron flow takes place only when vibrations are excited. By controlling the segregation of boron in semiconducting Si(111)-square root 3 x square root 3 R 30 degrees surfaces, we create a type of adatom with a(More)
We report a significant and persistent enhancement of the conductivity in free-standing non-intentionally doped InAs nanowires upon irradiation in ultra-high vacuum. Combining four-point probe transport measurements performed on nanowires with different surface chemistries, field effect based measurements and numerical simulations of the electron density,(More)
Determination of the Coulomb energy of single point defects is essential because changing their charge state critically affects the properties of materials. Based on a novel approach that allows us to simultaneously identify a point defect and to monitor the occupation probability of its electronic state, we unambiguously measure the charging energy of a(More)
High-density packing in organic crystals is usually associated with an increase of the coordination between molecules. Such a concept is not necessarily extended to two-dimensional molecular networks self-assembled on a solid surface, for which we demonstrate the key role of the surface in inducing the optimal packing. By a combination of scanning tunneling(More)
Knowledge and control of the self-organization of materials are the essential foundations not only for understanding the mechanism of the phenomenon but also for the development of functional materials and devices for practical applications. In fact, among the recent developments in nanoscale science and technology, the realization of new functions via(More)
Depuis l'avènement des nanotechnologies, une grande quantité de matériaux sont façonnésà l'´ echelle du nanomètre par des techniques diverses et l'intégration de ces nanostructures demande une caractérisation de leur structuré electronique. La microscopiè a effet tunnel est adaptéè a cesétudes car elle permet l'adressage de nanostructures uniques pour(More)
Functionalization of Ge surfaces with the aim of incorporating specific dopant atoms to form high-quality junctions is of particular importance for the development of solid-state devices. In this study, we report the shallow doping of Ge wafers with a monolayer doping strategy that is based on the controlled grafting of Sb precursors and the subsequent(More)
Two-dimensional networks of quantum dots connected by atomic bonds have an electronic structure that is distinct from that of arrays of quantum dots coupled by ligand molecules. We prepared atomically coherent two-dimensional percolative networks of PbSe quantum dots connected via atomic bonds. Here, we show that photoexcitation leads to generation of free(More)
Carrier multiplication (CM), the creation of electron-hole pairs from an excited electron, has been investigated in a silicon p-n junction by multiple probe scanning tunneling microscopy. The technique enables an unambiguous determination of the quantum yield based on the direct measurement of both electron and hole currents that are generated by hot(More)