Matthieu Urbain

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This paper deals with a set of ultra fast converter connected to the winding of AC machine by a short planar cable. The main feature of this study is to design a set of bus bar, a planar cable to mitigate surges produced at each switching commutation of the SiC Transistor, without consequently modifying its rise time. This calculation is obtained by the(More)
The static characteristics of CREE 1200V/100A 4H-SiC MOSFET have been fully characterized at temperatures ranging from 0°C to 150°C. The distinct characteristics of high power SiC MOSFET compared with the silicon counterparts are analyzed and explained. A novel physics-based analytical model for SiC MOSFET has been developed by using the MAST language and(More)
4H-SiC MOSFET have been fully characterized in the forward conduction over the temperature range -30°C to 150°C. The distinct characteristics of SiC MOSFET and the Si MOSFET counterpart are compared and explained. A physics-based analytical model for SiC MOSFET has been developed by using the MAST language and simulated with SABER. The(More)
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