Matthias Wuttig

Riccardo Mazzarello3
Wei Zhang3
Jamo Momand2
Bart J. Kooi2
3Riccardo Mazzarello
3Wei Zhang
2Jamo Momand
2Bart J. Kooi
Learn More
Phase-change materials are the basis for next-generation memory devices and reconfigurable electronics, but fundamental understanding of the unconventional kinetics of their phase transitions has been hindered by challenges in the experimental quantification. Here we obtain deeper understanding based on the temperature dependence of the crystal growth(More)
Using reflection high-energy electron diffraction (RHEED), the growth onset of molecular beam epitaxy (MBE) deposited germanium telluride (GeTe) film on Si(111)-(√3 × √3)R30°-Sb surfaces is investigated, and a larger than expected in-plane lattice spacing is observed during the deposition of the first two molecular layers. High-resolution transmission(More)
  • Barbara Casarin, Antonio Caretta, Jamo Momand, Bart J. Kooi, Marcel A. Verheijen, Valeria Bragaglia +10 others
  • 2016
The technological success of phase-change materials in the field of data storage and functional systems stems from their distinctive electronic and structural peculiarities on the nanoscale. Recently, superlattice structures have been demonstrated to dramatically improve the optical and electrical performances of these chalcogenide based phase-change(More)
Memory based on phase change materials is currently the most promising candidate for bridging the gap in access time between memory and storage in traditional memory hierarchy. However, multilevel storage is still hindered by the so-called resistance drift commonly related to structural relaxation of the amorphous phase. Here, we present the temporal(More)
It has recently been shown that a metal-insulator transition due to disorder occurs in the crystalline state of the GeSb2Te4 phase-change compound. The transition is triggered by the ordering of the vacancies upon thermal annealing. In this work, we investigate the localization properties of the electronic states in selected crystalline (GeTe)x-(Sb2Te3)y(More)
Phase-change materials are technologically important due to their manifold applications in data storage. Here we report on ab initio molecular dynamics simulations of crystallization of the phase change material Ag4In3Sb67Te26 (AIST). We show that, at high temperature, the observed crystal growth mechanisms and crystallization speed are in good agreement(More)
— Phase change materials are among the most promising compounds in information technology. They can be very rapidly switched between the amorphous and the crystalline state, indicative for peculiar crystallization behaviour. Phase change materials are already employed in rewriteable optical data storage, where the pronounced difference of optical properties(More)
  • 1