Matthias Wuttig

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Phase-change materials are the basis for next-generation memory devices and reconfigurable electronics, but fundamental understanding of the unconventional kinetics of their phase transitions has been hindered by challenges in the experimental quantification. Here we obtain deeper understanding based on the temperature dependence of the crystal growth(More)
The technological success of phase-change materials in the field of data storage and functional systems stems from their distinctive electronic and structural peculiarities on the nanoscale. Recently, superlattice structures have been demonstrated to dramatically improve the optical and electrical performances of these chalcogenide based phase-change(More)
Memory based on phase change materials is currently the most promising candidate for bridging the gap in access time between memory and storage in traditional memory hierarchy. However, multilevel storage is still hindered by the so-called resistance drift commonly related to structural relaxation of the amorphous phase. Here, we present the temporal(More)
The time-resolved ultrafast electric field-driven response of crystalline and amorphous GeSbTe films has been measured all-optically, pumping with single-cycle terahertz pulses as a means of biasing phase-change materials on a sub-picosecond timescale. Utilizing the near-band-gap transmission as a probe of the electronic and structural response below the(More)
Le monde est un livre dont chaque pas nous ouvre une page. Transport électronique dans les matériaux amorphes à changement de phase Le travail présenté dans cette thèse apporte un éclairage sur le transport électronique dans les matériaux amorphes à changement de phase. En particulier, le rôle des défauts localisés a été étudié systématiquement avec des(More)
Using reflection high-energy electron diffraction (RHEED), the growth onset of molecular beam epitaxy (MBE) deposited germanium telluride (GeTe) film on Si(111)-(√3 × √3)R30°-Sb surfaces is investigated, and a larger than expected in-plane lattice spacing is observed during the deposition of the first two molecular layers. High-resolution transmission(More)
Electronic phase-change memory devices take advantage of the different resistivity of two states, amorphous and crystalline, and the swift transitions between them in active phase-change materials (PCMs). In addition to these two distinct phases, multiple resistive states can be obtained by tuning the atomic disorder in the crystalline phase with heat(More)