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Impact of Rotational Twin Boundaries and Lattice Mismatch on III-V Nanowire Growth.

• Matthias Steidl, Christian Koppka, +6 authors Thomas Hannappel
• ACS nano
• 2017

Pseudomorphic planar III-V transition layers greatly facilitate the epitaxial integration of vapor-liquid-solid grown III-V nanowires (NW) on Si(111) substrates. Heteroepitaxial (111) layer growth,… (More)

Comparative analysis on resistance profiling along tapered semiconductor nanowires: multi-tip technique versus transmission line method.

• Andreas Nägelein, Lisa Liborius, +4 authors Thomas Hannappel
• Journal of physics. Condensed matter : an…
• 2017

The detection of doping dependent values like contact- and path resistances along nanowires (NWs) still proves to be rather challenging compared to planar structures. Unfortunately, the usually used… (More)

MOVPE-preparation of Si(111) surfaces for III–V nanowire growth

• Matthias Steidl, Agnieszka Paszuk, +7 authors Thomas Hannappel
• 2013 International Conference on Indium Phosphide…
• 2013

We studied the preparation of the clean Si(111) surface in H₂ ambient with in situ reflection anisotropy spectroscopy and UHV-based surface science tools after contamination-free transfer.… (More)

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