Matthias Seelmann-Eggebert

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In this paper, we are presenting two terahertz monolithic integrated circuits (TMICs) for use in next-generation radar and spectroscopy systems operating in the WR-1.5 waveguide band (500 - 750 GHz). Both amplifier circuits have been realized using a 35 nm InAlAs/InGaAs based metamorphic high electron mobility transistor (mHEMT) technology in combination(More)
A new concept for the low-frequency dispersion aspect of large-signal modeling of microwave III-V field-effect transistors is presented. The approach circumvents the integrability problem between the small-signal transconductance <i>Gm</i>RF and the output conductance <i>G</i><sub>dsRF</sub> by means of an integral formulation and simultaneously yields a(More)
In this paper, we present a four-stage submillimeter-wave monolithic integrated circuit (S-MMIC) amplifier for use in next generation radar and communication systems operating in the WR-2.2 waveguide band (325 - 500 GHz). The low-noise amplifier circuit (LNA) has been realized using a 35 nm InAlAs/InGaAs based metamorphic high electron mobility transistor(More)
In this paper, we present a fully-scalable compact small-signal equivalent circuit model for AlGaN/GaN HEMTs with a gate length of 100 nm. The compact model yields a parasitic shell topology and is scalable from two up to eight transistor-fingers and is valid for finger lengths from 15 &#x03BC;m to 100 &#x03BC;m. It accurately covers the frequency range(More)
AlGaN/GaN HEMTs have been widely used in RF power circuits such as high power amplifiers [1]. This is mainly due to the capability to handle large power. Besides this main advantage, this technology demonstrates good performances in terms of noise, linearity, and robustness. This paper presents the design, and measurement results of different mixers(More)
A broadband high-gain amplifier MMIC (monolithic microwave integrated circuit) operating over the full D-band from 110-170 GHz is presented. A meandered coplanar waveguide (CPW) design is used to shrink the size of the circuit block to 0.9 &#x00D7; 0.7 mm while accommodating four amplification stages. The gain of the amplifier exceeds 25 dB nearly over the(More)
This paper presents the design and performance of various millimeter-wave FET switches realized in a metamorphic HEMT technology. The single-pole multi-throw switch configurations are targeting wireless communication frontends and imaging radiometers at 60, 94 and 120 GHz. In SPDT switches, state-of-the-art insertion loss of 1.4 and 1.8 dB is achieved at 60(More)
A state-space approach to large-signal (LS) modeling of high-speed transistors is presented and used as a general framework for various model descriptions of the dispersive features frequently observed for HEMTs at low frequency. Ensuring unrestricted LS-small-signal (SS) model compatibility, the approach allows to construct LS models from multibias SS(More)
The high power capabilities in combination with the low noise performance of Gallium Nitride (GaN) makes this technology an excellent choice for robust receivers. This paper presents the design and measured results of three different LNAs, which operate in C-, Ku-, and Ka-band. The designs are realized in 0.25 μm and 0.15 μm AlGaN/GaN microstrip technology.(More)