Matthew Lanahan

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A family of embedded DRAMs which are fabricated in 45nm SOI technology is presented. The fast eDRAM has 64 b/BL and achieves a random cycle time of 1.3ns for V<inf>DD</inf> = 1.00V and typical process. The dense eDRAM has 128 b/BL and operates in multi-bank modes up to 1.67GHz for V<inf>DD</inf> = 1.0V and nominal process. The staggered - folded BL(More)
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