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Journals and Conferences
In this paper, we present recent progress on high-performance InP-based long-wavelength VCSELs such as 1.3 or 1.55 mum incorporating a buried tunnel junction (BTJ) for applications in optical communication and sensing
Coupled oscillators are used to model systems such as arrays of lasers or detectors whose response is combined to increase signal strength. I investigated systems of two and three coupled nonlinear oscillators, focusing on two different models: One model includes only the phases of the oscillators, and the other includes both phases and amplitudes. The… (More)
GaInAsSb-AlGaAsSb multiple quantum-well (QW) lasers with an emission wavelength of 2.81 /spl mu/m are reported. The ridge waveguide lasers with highly strained QWs show continuous-wave laser emission up to 25/spl deg/C; in pulsed mode, the lasers operate up to 60/spl deg/C. For pulsed operation, a threshold current density of 360 A/cm/sup 2/ is found for… (More)
We propose a type-II AlGaAsSb-AlGaInAs heterostructure superlattice for improved electronically tunable laser diodes exploiting the free-carrier plasma effect. In electronically tunable laser diodes, commonly type-I heterostructure diodes (e.g., GaInAsP-InP) are used as tuning region; however, at equal tuning, the type-II heterostructure superlattices… (More)
GaInAsSb-AlGaAsSb type-I quantum well laser diodes with compressively strained active regions were fabricated. The ridge waveguide lasers show room-temperature continuous wave operation in the wavelength range from 2.2 /spl mu/m to 3 /spl mu/m.
1.79-/spl mu/m InGaAs-InGaAlAs strained-layer quantum-well diode lasers have been fabricated. A characteristic temperature of 72 K has been achieved. At a temperature as high as 100/spl deg/C, a continuous-wave output power of more than 6.5 mW per facet has been demonstrated with lasers using as-cleaved facets as mirrors.
Room temperature continuous wave operation of AlGaAsSb/GalnAsSb MQW diode lasers emitting beyond 3 μm were demonstrated. To increase the valence band offset of the quantum wells, AlGalnAsSb digital alloy was introduced as barriers in the active region. Pulsed mode operation at 3.25 μm up to 50°C has been achieved.
A new cw light source for the mid-infrared with output powers exceeding 1 mW is described. It is based on an optically pumped narrow gap semiconductor. For efficient light extraction optimised surface structure is adopted