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In this paper, the effect of the MIGS and the poly-Si process on the Vfb shift was carefully examined and clarified. We conclude that these factors are not correlated with the shift. We found that(More)
Ge diffusion into high-k layer is completely suppressed by taking advantage of thermally stable Zr-silicate/Ge structure. This leads to high mu<sub>h</sub> of 210 cm <sup>2</sup>/Vsec at 0.1M V/cm,(More)
This paper describes the design, construction and testing of a 750-V, 100-kW, 20-kHz bidirectional isolated dual-active-bridge dc-dc converter using four 1.2-kV 400-A SiCMOSFET/SBD dual modules. The(More)