Masanori Natsui

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Series connection of metal-oxide semiconductor transistors and spin-injection-writable magneto-resistive junction devices based on logic-in-memory architecture realizes both programmable logic operation and nonvolatile storage function. A lookup table (LUT) circuit in field-programmable gate array fabricated by a 0.14µm magneto/semiconductor-hybrid(More)
A compact lookup table (LUT) circuit using spin transfer-torque magnetic tunnel junction (STT-MTJ) devices combined with MOS transistors is proposed for a standby-power-free field-programmable gate array (FPGA). Since STT-MTJ devices essentially have an asymmetric characteristic in switching currents, one of two write-control transistors can be implemented(More)
A cost-efficient self-terminated write driver is proposed for low-energy RAM and logic circuits by using spin-transfer-torque (STT)-magnetic tunnel junction (MTJ) devices. Since a bidirectional write current is required for STT switching, data-dependent write-completion monitoring, where the node with large voltage difference between before and after the(More)
Nonvolatile logic-in-memory (NV-LIM) architecture [1], where magnetic tunnel junction (MTJ) devices [2] are distributed over a CMOS logic-circuit plane, has the potential of overcoming the serious power-consumption problem that has rapidly become a dominant constraint on the performance improvement of today's VLSI processors. Normally-off and instant-on(More)
A novel compact and static-power-free nonvolatile ternary content-addressable memory (TCAM) cell, where two-bit nonvolatile magnetic tunnel junction (MTJ) devices are stacked over the comparison logic circuit, is proposed for a high-density and ultra low-energy fully-parallel TCAM. The use of nonvolatile logic-in-memory circuit architecture makes it(More)
A six-MOS-transistor/two-MTJ-device (6T-2MTJ)-based cell circuit with an autonomous leakage-current control mechanism is proposed and fabricated for a fully parallel nonvolatile TCAM. A diode-connected nMOS transistor is inserted into each cell for match-line discharge control, which enables bit-parallel equality-search operation more than 144 bits. Since(More)
A perpendicular magnetic-tunnel-junction (MTJ)-based 2T-2R ternary content-addressable memory (TCAM) cell is proposed for a high-density nonvolatile word-parallel/bit-serial TCAM. The use of MOS/MTJ-hybrid logic makes it possible to implement a compact nonvolatile TCAM cell with 2.5 &#x03BC;m<sup>2</sup> of a cell size in a 0.14-&#x03BC;m CMOS and a 100-nm(More)
A ternary content-addressable memory (TCAM)-based hardware called nonvolatile &#x201C;multi-functional CAM (MF-CAM)&#x201D; is proposed for an ultra-low-energy &#x201C;full-text search&#x201D; system in recent data centers. The proposed nonvolatile MF-CAM-based full-text search engine can perform parallel comparison while eliminating leakage energy by(More)