Masaki Asakawa

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InGaAs/AlAsSb coupled double quantum wells (CDQWs) have been attracting much attention for their use in all-optical switches at 1.55 μm wavelength because of their large conduction band offset of 1.7 eV. In this study, we have investigated the spin relaxation in(More)
Summary form only given. A GaAs/GaAsP strain-compensated superlattice (SL) is a highly promising spin-polarized electron source. In this paper, we report the spin relaxation for a GaAs/GaAsP strain-compensated SL obtained by time-resolved spin-dependent pump and probe reflectance measurements. The spin relaxation time of the GaAs/GaAsP strain-compensated SL(More)
In-situ reflection high-energy electron diffraction (RHEED) observation and X-ray diffraction measurements were performed on heterojunction interfaces of CuGaSe2/CnInSe2/CuGaSe2 grown on GaAs (001) using migration-enhanced epitaxy. The streaky RHEED pattern and persistent RHEED intensity oscillations caused by the alternate deposition of migration-enhanced(More)
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