Masahiko Mitsuhashi

We don’t have enough information about this author to calculate their statistics. If you think this is an error let us know.
Learn More
0026-2714/$ see front matter 2011 Elsevier Ltd. A doi:10.1016/j.microrel.2011.07.094 ⇑ Corresponding author. E-mail address: taito@kanagawa-iri.go.jp (T. Ito). Metallization multilayers on the back side of a power device were focused in this study. Si wafers coated with high melting point metals were exposed at 300 C for 300 h to investigate diffusion(More)
  • 1