Masahiko Mitsuhashi

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0026-2714/$ see front matter 2011 Elsevier Ltd. A doi:10.1016/j.microrel.2011.07.094 ⇑ Corresponding author. E-mail address: (T. Ito). Metallization multilayers on the back side of a power device were focused in this study. Si wafers coated with high melting point metals were exposed at 300 C for 300 h to investigate diffusion(More)
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