Masaaki Kuzuhara

We don’t have enough information about this author to calculate their statistics. If you think this is an error let us know.
Learn More
SUMMARY We have evaluated the tunneling contact resistivity based on numerical calculation of tunneling current density across an AlGaN barrier layer in non-polar AlGaN/GaN heterostructures. In order to reduce the tunneling contact resistivity, we have introduced an n +-Al X Ga 1−X N layer between an n +-GaN cap layer and an i-AlGaN barrier layer. The(More)
  • 1