Maryline Bawedin

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Several types of floating-body capacitorless 1T-DRAM memory cells with planar SOI or multi-gate configuration are reviewed and compared. We show that 1T-DRAMs are also compatible with the ‘unified memory’ paradigm which aims at combining, within a single SOI transistor, volatile, nonvolatile and multiple-state memory functionalities. We focus on our(More)
We describe the transient floating-body mechanism which occurs in fully depleted SOI transistors and leads to a memory effect. A physics-based model for the potential variation with time is proposed and validated by numerical simulations. This model reproduces and clarifies the operation of the novel capacitor-less MSDRAM, the properties of which are(More)
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