Maryam Olyaei

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Postprint This is the accepted version of a paper published in PROCEEDINGS OF THE 2014 44TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (ESSDERC 2014). This paper has been peer-reviewed but does not include the final publisher proof-corrections or journal pagination. Improved Low-frequency Noise for 0.3nm EOT Thulium Silicate Interfacial Layer. Access(More)
This review will discuss the in-situ surface engineering of active channel surfaces prior to or during the ALD high-k/metal gate deposition process. We will show that by carefully choosing ALD in-situ pre-treatment methods and precursor chemistries relevant electrical properties for future high-k dielectrics can be improved. Different high-k dielectrics(More)
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