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A microelectromechanical shock sensor, which uses a latching mechanism to record a shock event above a specified threshold level, is discussed in this article. The fabrication process for the shock… (More)
A 0.4 μm p-channel silicon-on-insulator (SOI) metal-oxide-field-effect-transistor (MOSFET) is measured at 300 K and 4 K. Finite difference two dimensional numeric device simulations are performed at… (More)
This article presents the first experimental evidence that plasmonic excitation in metal films perforated with regular arrays of subwavelength apertures can produce high resolution far-field… (More)
For the first time simulation and operation of a silicon photonic modulator is demonstrated at cryogenic temperatures. The device operated at 5Gbps and 10Gbps at a temperature of 115K opening… (More)
We report enhanced transmission of 250 nm radiation by sub-wavelength square aperture arrays on silver and demonstrate its use in optical lithography with far-reduced number of addressed pixels to… (More)