Martin Scheinert

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This paper focuses on the most recent technical developments in Integrated Gate Commutated Thyristors. Improved Safe Operating Area (SOA) of a new IGCT chip set based on ABB's High Power Technology (HPT) platform with a rated voltage of 10kV is presented. A matching 10kV freewheeling diode is also reported. Combined, these developments open the door to new(More)
In this paper we present a novel Integrated Gate- Commutated Thyristor (IGCT) for application in medium voltage drives at voltage levels of 7.2kV RMS or more. Measurements of over 11kV blocking-, on-state- and expanded SOA switching behavior are the basis for a detailed description of the performance. The new design features a planar junction termination,(More)
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