Martin Knaipp

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Integration of low voltage analog and logic circuits as well as high-voltage (HV) devices for operation at greater than 5V enables Smart Power ICs used in almost any system that contains electronics. HVCMOS (High-Voltage CMOS) technologies offer much lower process cost, if compared to BCD technologies, they enable multiple HV levels on a single chip, and(More)
This paper presents one of the first fully functional FlexRay transceivers manufactured in a 0.35 μm CMOS High-Voltage technology, which provides high voltage MOS devices together with standard 3.3 V gates. The circuit operates as interface between a generic controller and the copper wire FlexRay physical bus, to be used in fault tolerant and fail safe(More)
We quantitatively image the doping concentration and the capacitance of a high-voltage lateral MOS transistor device with a channel length of 0.5 m at 20 GHz frequency using Scanning Microwave Microscopy (SMM). The transistor is embedded in a deep n-well forming a flat pn junction with the psubstrate, with the shape of the pn junction resolved in the SMM(More)
The breakdown of an overvoltage protection structure is analyzed in the temperature range from 298 to 523 K. The avalanche generation rates are modeled as a function of the carrier and lattice temperature. The generation rates are proportional to the carrier concentration. Careful attention is given to the pre-breakdown regime and to the breakdown process.(More)
A Drift-Diffusion (DD) simulation is compared with a hydrodynamic (HD) simulation. The used device is a submicron n-channel MOSFET. The current density distribution in the area of maximal generation is calculated. The influence of a surface reduced impact generation rate model is discussed. Finally a generation rate which is proportional to the carrier(More)
We have analyzed the II in an Enhanced Drift Diffusion (EDD) model and in a fully self-consistent hydrodynamic (HD) model. In both models the influence of a surface reduction of the generation rate is considered. In the EDD model the electron temperature is calculated from a previous HD or Monte Carlo simulation. In both models the carrier temperature is(More)
This paper presents one of the first fully functional FlexRay transceivers manufactured in a 0.35 mum CMOS high-voltage technology, which provides high voltage MOS devices together with standard 3.3 V gates. The circuit operates as interface between a generic controller and the copper wire FlexRay physical bus, to be used in fault tolerant and fail safe(More)
In todays high voltage processes the optimization of process and layout design is a key point to get competitive products. Effects like punch-through between two junctions and breakdown near the surface of the wells make it necessary to analyze complex three-dimensional process steps by simulators which give accurate answers to the process engineers.