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This paper presents one of the first fully functional FlexRay transceivers manufactured in a 0.35 µm CMOS High-Voltage technology, which provides high voltage MOS devices together with standard 3.3 V gates. The circuit operates as interface between a generic controller and the copper wire FlexRay physical bus, to be used in fault tolerant and fail safe(More)
The breakdown of an overvoltage protection structure is analyzed in the temperature range from 298 to 523 K. The avalanche generation rates are modeled as a function of the carrier and lattice temperature. The generation rates are proportional to the carrier concentration. Careful attention is given to the pre-breakdown regime and to the breakdown process.(More)
A Drift-Diffusion (DD) simulation is compared with a hydrodynamic (HD) simulation. The used device is a submicron n-channel MOSFET. The current density distribution in the area of maximal generation is calculated. The influence of a surface reduced impact generation rate model is discussed. Finally a generation rate which is proportional to the carrier(More)
This paper describes a deep trench module development for a Smart Power Technology by introducing a lateral dielectric isolation. The approach to introduce the new isolation type in a modular way has impact on the process development and the layout environment. The work describes the advantages and the limitations of the new isolation type which results in(More)
This paper presents one of the first fully functional FlexRay transceivers manufactured in a 0.35 mum CMOS high-voltage technology, which provides high voltage MOS devices together with standard 3.3 V gates. The circuit operates as interface between a generic controller and the copper wire FlexRay physical bus, to be used in fault tolerant and fail safe(More)
We present results of two-dimensional simulations of polysilicon emitter Bipolar Junction Transistors (BJTs). For that purpose proper polysilicon contact models have been implemented in our two-dimensional simulator MINIMOS-NT. By accounting for self-heating effects a good agreement between simulated and measured forward and output device characteristics is(More)
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