Martin D. Giles

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This paper describes the development of real-time control technology for the improvement of manufacturing characteristics of reactive ion etchers. A general control strategy is presented. The principal ideas are to sense key plasma parameters , develop a dynamic input-output model for the subsystem connecting the equipment inputs to the key plasma(More)
This paper describes the Semiconductor Wafer Representation (SWR) for representing and manipulating wafer state during process and device simulation. The goal of the SWR is to provide an object-oriented interface to a collection of functions designed for developing and integrating Technology CAD (TCAD) applications. By providing functions which can be(More)
– TCAD process and device modeling has become an essential component of advanced technology development, delivering physical insight into processes and device operation and enabling development and optimization of technology flows. This paper highlights emerging challenges in extending these capabilities into the nanotechnology era, and the opportunities(More)
To increase the amount of devices on a constant wafer area a change from the common two-dimensional (2D) structures to a three-dimensional (3D) layout is suggested for modern semiconductor devices. Therefore modern process simulators must be capable of modeling these 3D structures. A simulation tool using the Monte Carlo method for ion implantation with the(More)
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