Martin D. Giles

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This paper describes the development of real-time control technology for the improvement of manufacturing characteristics of reactive ion etchers. A general control strategy is presented. The principal ideas are to sense key plasma parameters, develop a dynamic input-output model for the subsystem connecting the equipment inputs to the key plasma variables,(More)
A novel computationally efficient model for stress-modulated hole mobility, suitable for a continuum transport simulators, has been developed and implemented. The physically-based model captures bandstructure modulation due to stress, and reproduces the experimental mobility behavior over a wide range of stress, electric fields, and current directions. The(More)
A two-dimensional method based on numerical solution of the Boltzmann transport equation has been developed for calculating ion implantation profiles. The method is capable of treating arbitrarily contoured surfaces containing multiple layers of different materials. Calculations yield the concentration profile of the implanted ion, an estimate of the damage(More)
A technique for quantitative interpretation of actinometric data to deduce bulk plasma fluorine concentration in a CF4/Ar plasma has been developed and tested on a commercial reactive ion etcher. This static, in situ measurement is useful for monitoring fluorine in a manufacturing environment and, in particular, for application of real-time feedback control(More)
This paper describes the Semiconductor Wafer Representation (SWR) for representing and manipulating wafer state during process and device simulation. The goal of the SWR is to provide an object-oriented interface to a collection of functions designed for developing and integrating Technology CAD (TCAD) applications. By providing functions which can be(More)
Technology CAD process and device simulation tools play a critical role in advanced technology development by giving insight into the relationships between processing choices and nanoscale device performance that cannot be obtained from physical metrology tools alone. TCAD makes its greatest impact when a detailed understanding of the underlying physical(More)
The effect of extrinsic background doping on the transient enhancement of dopant diffusion for an ion-implanted dopant is investigated to gain insight into the role of point defect charge states. The transient effect is found to be greatly increased for extrinsic background doping of the same type as the implanted ion, and reduced for background doping of(More)