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Recent experimental investigations of sub-10nm carbon nanotube (CNT) field-effect transistors (FETs) promote CNT based 1D-electronics as a candidate for a future aggressively scaled transistor technology. However, the ballistic transport within the 1D semiconducting CNT channel is largely determined by charge injection from the contacts rendering reliable(More)
This paper gives a short overview on our recent investigations towards a multiscale modeling and simulation framework for metal-CNT interfaces. We employ three simulation approaches with well defined interfaces. For the simulation at device level we make use of a recently developed wave-function based effective-mass Schrödinger-Poisson solver which(More)
Covalent functionalization of carbon nanotubes (CNTs) might be an option to optimize the behavior of CNT field effect transistors (FETs) [1] (despite all related technological problems). In principle, the atoms or molecules used for functionalizing are placed randomly along the CNT or they are high-ordered in decoration patterns. Here, only high-ordered(More)
Carbon nanotube field-effect transistors (CNTFETs) are studied using atomistic quantum transport simulation and numerical device simulation. The studied CNTFETs consist of n-doped source- and drain-electrodes with an ideal wrap-around gate. Both the off-as well as the on-currents are described in very good agreement by both methods, which verifies the(More)
Downscaling of the contact length Lc of a side-contacted carbon nanotube field-effect transistor (CNTFET) is challenging because of the rapidly increasing contact resistance as Lc falls below 20-50 nm. If in agreement with existing experimental results, theoretical work might answer the question, which metals yield the lowest CNT-metal contact resistance(More)
Top gate, global back gate and buried gate CNTFET structures with a channel length of 5.9 nm are studied in the scope of the 2026 ITRS requirements. The studies are performed using a numerical device simulator. Figures of merit and performance parameters such as the switching speed, the switching energy, I<sub>on</sub>/I<sub>off</sub>-ratio, among others,(More)
Reconfigurable field effect transistors (RFETs) are attractive for analog applications exploiting their inherent switch-ability from n-type to p-type behavior. Simulation studies by means of an experimentally calibrated 3D numerical device simulator reveal that the recently proposed simplified single gate (SG) RFET architecture leads to a two times larger(More)
An important consideration in the design and reliability of circuits is the role of defects, impurities, and parameter fluctuations in affecting the transistor characteristics. Here, the impact of vacancies on CNTFET characteristics is studied by means of a multi-scale modeling and simulation framework. Very recently, defect densities of 0:02% up to 0:2%(More)