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We review some usual laser range finding techniques for industrial applications. After outlining the basic principles of triangulation and time of flight [pulsed, phase-shift and frequency modulated continuous wave (FMCW)], we discuss their respective fundamental limitations. Selected examples of traditional and new applications are also briefly presented.
1.55-microm vertical cavity surface-emitting low-parasitic lasers show open eyes up to 22-Gb/s modulation speed. Uncooled error-free operation over a wide temperature range up to 85 degrees C under constant bias conditions is demonstrated at 12.5-Gb/s data rate. At these fixed bias conditions the laser characteristics are practically invariant with(More)
A novel long-wavelength vertical-cavity surface-emitting laser (VCSEL) structure based on a subwavelength high-contrast grating (HCG) as the output mirror has been realized. By design, these devices are highly polarization stable, are single mode at large apertures, and solve the VCSEL-mirror problem at long wavelengths in an elegant way. With(More)
We present an extended ensemble Monte Carlo approach, allowing for the self-consistent modeling of terahertz difference frequency generation in quantum cascade lasers. Our simulations are validated against available experimental data for a current room temperature design. Tera-hertz output powers in the mW range are predicted for ideal light extraction.
In this paper, the enhanced high-speed performance and energy-efficiency of 1.3 μm Short-Cavity VCSEL with buried-tunnel-junction is reported. Error-free data-transmission at 30 Gb/s up to 10 km and at 25 Gb/s up to 25 km is performed at room temperature over single mode fiber. Furthermore, low energy-to-data-distance ratios of 24 fJ/(bit·km)(More)
The heterogeneous integration of InP-based type-II quantum well photodiodes on silicon photonic integrated circuits for the 2 µm wavelength range is presented. A responsivity of 1.2 A/W at a wavelength of 2.32 µm and 0.6 A/W at 2.4 µm wavelength is demonstrated. The photodiodes have a dark current of 12 nA at -0.5 V at room temperature. The absorbing active(More)
Utilizing narrow band gap nanowire (NW) materials to extend nanophotonic applications to the mid-infrared spectral region (>2-3 μm) is highly attractive, however, progress has been seriously hampered due to their poor radiative efficiencies arising from nonradiative surface and Auger recombination. Here, we demonstrate up to ~ 10(2) times enhancements of(More)
Intra-cavity diffraction in VCSELs is a loss mechanism that potentially can cause a significant decrease in efficiency and a rise in the threshold current, particularly in cavities with small lateral features with a high index contrast. One such VCSEL type is the 2.3 microm GaSb-based buried tunnel junction (BTJ) VCSEL studied in this work, where the BTJ(More)
2-µm-wavelength-range silicon-on-insulator (SOI) arrayed waveguide gratings (AWGs) with heterogeneously integrated InP-based type-II quantum well photodetectors are presented. Low insertion loss (2.5-3 dB) and low crosstalk (-30 to -25 dB) AWGs are realized. The InP-based type-II photodetectors are integrated with the AWGs using two different coupling(More)