Marko Koricic

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A performance of very low-cost 180 nm BiCMOS Horizontal Current Bipolar Transistor (HCBT) technology in wireless communication frequency band is analyzed. A down-converting mixer and divide-by-2 static frequency divider, fabricated using two different HCBT transistors are presented. The higher breakdown-voltage HCBT (3 additional lithography masks) has(More)
Emitter length scaling of HCBT with single polysilicon region is investigated by 3D device simulations with the emphasis on the high frequency characteristics. It is shown that collector current and junction capacitances have linear dependence on the emitter length. Collector resistance can be represented by two components which appear in parallel, one that(More)
Design of cross-coupled voltage controlled oscillator in low-cost HCBT technology is presented. Beside the low-complexity front-end devices, only 2 metal layers are used and the passives are implemented in the available on-chip structures. Varactors are fabricated as pn-junctions by using the ion implantation from the technology. Symmetric inductors are(More)
Double-Emitter Reduced-Surface-Field Horizontal Current Bipolar Transistor is analyzed by the device simulations. Geometrical parameters of the local p-well substrate, which is used to introduce the second drift region are investigated. It is shown that the length of the p-well lpw=0.5 µm is sufficient to obtain efficient electric field shielding and BVCEO(More)
The relative contribution of the hot electrons and hot holes to the reliability degradation of the Horizontal Current Bipolar Transistor (HCBT) is investigated by TCAD simulations. The base current (IB) degradation, obtained by the reverse-bias emitter-base (EB) and mixed-mode stress measurements, is caused by a hot carrier-induced interface trap generation(More)
The impact of the emitter polysilicon etching in Tetramethyl Ammonium Hydroxide (TMAH) on the characteristics of high-linearity mixers fabricated with the low-cost Horizontal Current Bipolar Transistor (HCBT) is analyzed. During emitter formation, the thick layer of α-Si is deposited over the whole wafer, which is then etched-back in the TMAH. The(More)
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