Mark S. Lundstrom

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A one-flux scattering theory of the silicon MOSFET is introduced. The result gives the current-voltage characteristic in terms of scattering parameters rather than a mobility. For long channel transistors, the results reduce to conventional drift-diffusion theory, but they also apply to devices in which the channel length is comparable to or even shorter(More)
A common feature of the single-walled carbon-nanotube field-effect transistors fabricated to date has been the presence of a Schottky barrier at the nanotube--metal junctions. These energy barriers severely limit transistor conductance in the 'ON' state, and reduce the current delivery capability--a key determinant of device performance. Here we show that(More)
Although carbon nanotube (CNT) transistors have been promoted for years as a replacement for silicon technology, there is limited theoretical work and no experimental reports on how nanotubes will perform at sub-10 nm channel lengths. In this manuscript, we demonstrate the first sub-10 nm CNT transistor, which is shown to outperform the best competing(More)
High-performance enhancement-mode semiconducting carbon nanotube field-effect transistors (CNTFETs) are obtained by combining ohmic metal−tube contacts, high-dielectric-constant HfO2 films as gate insulators, and electrostatically doped nanotube segments as source/drain electrodes. The combination of these elements affords high ON currents and subthreshold(More)
The performance limits of carbon nanotube field-effect transistors ~CNTFETs! are examined theoretically by extending a one-dimensional treatment used for silicon metal–oxide– semiconductor field-effect transistors ~MOSFETs!. Compared to ballistic MOSFETs, ballistic CNTFETs show similar I – V characteristics but the channel conductance is quantized. For(More)
The integration of materials having a high dielectric constant (high-kappa) into carbon-nanotube transistors promises to push the performance limit for molecular electronics. Here, high-kappa (approximately 25) zirconium oxide thin-films (approximately 8 nm) are formed on top of individual single-walled carbon nanotubes by atomic-layer deposition and used(More)
In 2002, the National Science Foundation established the Network for Computational Nanotechnology (NCN), a network of universities supporting the National Nanotechnology Initiative by bringing computational tools online, making the tools easy to use, and supporting the tools with educational materials. Along the way, NCN created a unique cyberinfrastructure(More)
Single walled carbon nanotubes with Pd Ohmic contacts and lengths ranging from several microns down to 10 nm are investigated by electron transport experiments and theory. The mean-free path (MFP) for acoustic phonon scattering is estimated to be l(ap) approximately 300 nm, and that for optical phonon scattering is l(op) approximately 15 nm. Transport(More)