Mark S Goorsky

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Vertical indium phosphide nanowires have been grown epitaxially on silicon (111) by metalorganic vapor-phase epitaxy. Liquid indium droplets were formed in situ and used to catalyze deposition. For growth at 350 degrees C, about 70% of the wires were vertical, while the remaining ones were distributed in the 3 other <111> directions. The vertical fraction,(More)
Perovskite photovoltaics offer a compelling combination of extremely low-cost, ease of processing and high device performance. The optoelectronic properties of the prototypical CH3NH3PbI3 can be further adjusted by introducing other extrinsic ions. Specifically, chlorine incorporation has been shown to affect the morphological development of perovksite(More)
Following up on previous work demonstrating that an intervention with at-risk mothers made a positive impact on the quality of mothers' partner support, responsiveness to the needs of the child, the child's expectation of being cared for, and child's response to a brief separation, the present paper examines whether quality of the mother's partner support(More)
The selective area, metalorganic vapor-phase epitaxy of gallium arsenide on silicon substrates was investigated. Low-temperature arsenic passivation of the silicon surface was realized at 650 1C. A two-step growth method was used to deposit the GaAs films with an optimum nucleation temperature of 400 1C. Layers nucleated at 350 1C or below were found to be(More)
We utilized monochromatic high energy synchrotron x-rays (100 keV) to perform transmission diffraction measurements on bulk cadmium zinc telluride (Cd 1-x Zn x Te, x ~ 0.1) crystals used for room temperature radiation detectors. The high-energy measurements assess the crystalline properties throughout the thickness (2-3 mm) of the structures and we(More)
In this work, we demonstrate a novel route for one-pot synthesis of two-dimensional gold nanoplates (2-D AuNPLs) on carbon nanotube (CNT) sheet. Well-defined AuNPLs are grafted onto CNT sheet via a facile hydrothermal reduction process, during which bromine ions are employed as the surfactant for gold anisotropic growth. Scanning electron microscopy (SEM)(More)
We engineered a factor-of-4 reduction in the bulk absorption coefficient over the 2.6-to-3.0-µm bandwidth in single-crystal Czochralski silicon optics for high-energy infrared lasers with high-temperature annealing treatments. Defect engineering adapted from the integrated circuit industry has been used to reduce the absorption coefficient across the(More)
Ultrasensitive field-effect transistor-based biosensors using quasi-two-dimensional metal oxide semiconductors were demonstrated. Quasi-two-dimensional low-dimensional metal oxide semiconductors were highly sensitive to electrical perturbations at the semiconductor-bio interface and showed competitive sensitivity compared with other nanomaterial-based(More)
The creation of new organic-inorganic phototransistors with high and broad spectral photosensitivity is reported. The extended charge transport and photoconductivity between the layers in the bilayer structure results in a notable detectivity of over 10(12) Jones and a linear dynamic range of over 100 dB at a broad spectral bandwidth across the UV-NIR(More)
Diamond films grown by chemical vapor deposition have the potential to improve the thermal management and reliability of AlGaN/GaN high electron mobility transistors. The integration of CVD diamond with GaN involves the nucleation and growth of diamond films on GaN which induces a vertical gradient in thermal conductivity of the diamond and can result in(More)
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