Mark S Goorsky

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The laboratory implementation of grazing incidence in-plane X-ray diffraction, using an unmodified commercial diffractometer, is described. Low resolution, high intensity measurements are illustrated in the study of the in-plane lattice parameters and texture of a thin polycrystalline ZnO film on glass, the in-plane order in Cd arachidate Langmuir-Blodgett(More)
The selective area, metalorganic vapor-phase epitaxy of gallium arsenide on silicon substrates was investigated. Low-temperature arsenic passivation of the silicon surface was realized at 650 1C. A two-step growth method was used to deposit the GaAs films with an optimum nucleation temperature of 400 1C. Layers nucleated at 350 1C or below were found to be(More)
We utilized monochromatic high energy synchrotron x-rays (100 keV) to perform transmission diffraction measurements on bulk cadmium zinc telluride (Cd 1-x Zn x Te, x ~ 0.1) crystals used for room temperature radiation detectors. The high-energy measurements assess the crystalline properties throughout the thickness (2-3 mm) of the structures and we(More)
Perovskite photovoltaics offer a compelling combination of extremely low-cost, ease of processing and high device performance. The optoelectronic properties of the prototypical CH3NH3PbI3 can be further adjusted by introducing other extrinsic ions. Specifically, chlorine incorporation has been shown to affect the morphological development of perovksite(More)
Triple axis x-ray diffraction was used to determine the real space geometry as well as study the evolution of rectangular-patterned corrugations in InP-based structures. Initial studies of gratings etched in the InP substrate using x-ray lithography and reactive ion etching determined the period of the grating to be-2300 A, the linewidthperiod ratio to be(More)
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