Mark Rioux

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High-temperature reverse-bias (HTRB) stress in a dry or a humid ambient is applied to power n-channel U-shaped trench-gated MOSFET (UMOSFETs). The HTRB is shown to induce negative-bias temperature instabilities (NBTI) in a parasitic p-channel MOSFET occurring in the n-channel UMOSFET during the stress. The manifestations of the NBTI were gate-controlled(More)
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