In practice, MOSFETs operate below the ballistic limit because carrier scatter within the device. To determine how far below the ballistic limit a device operates, we can plot eq. (3.45) for the device (knowing its oxide thickness and power supply and threshold voltages) and compare the results to the measured data. Typical data for circa 2000 technology… (More)
A one-flux scattering theory of the silicon MOSFET is introduced. The result gives the current-voltage characteristic in terms of scattering parameters rather than a mobility. For long channel transistors, the results reduce to conventional drift-diffusion theory, but they also apply to devices in which the channel length is comparable to or even shorter… (More)
Electron transport in model Si nanotransistors is examined by numerical simulation using a hierarchy of simulation methods, from full Boltzmann, to hydrodynamic, energy transport, and drift-diffusion. The on-current of a MOSFET is shown to be limited by transport across a low-field region about one mean-free-path long and located at the beginning of the… (More)
This paper discusses the device physics of carbon nanotube field-effect transistors (CNTFETs). After reviewing the status of device technology, we use results of our numerical simulations to discuss the physics of CNTFETs emphasizing the similarities and differences with traditional FETs. The discussion shows that our understanding of CNTFET device physics… (More)
multiband modeling of quantum electron transport through layered semiconductor devices, catalyst activity of water-assisted growth of single walled carbon nanotube forest characterization by a statistical and macroscopic approach, ABSTRACT: A high-performance millimeter-wave feed, designed for a broad-band radiometry application is presented. The feed… (More)
A simple treatment of the nano-scale MOSFET in the spirit of the Landauer approach to transport in mesoscopic structures is described. First, the essential physics is illustrated by examining numerical simulations. Next, the analytical theory of the ballistic MOSFET is discussed, and finally, the role of scattering in nano-scale MOSFETs is discussed.
Three impulse sources have been developed to cover a wide range of peak power, bandwidth and center frequency requirements. Each of the sources can operate in single shot, rep-rate, or burst modes. These devices are of rugged construction and are suitable for field use. This paper will describe the specifications and principals of operation for each source.… (More)