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A one-flux scattering theory of the silicon MOSFET is introduced. The result gives the current-voltage characteristic in terms of scattering parameters rather than a mobility. For long channel transistors, the results reduce to conventional drift-diffusion theory, but they also apply to devices in which the channel length is comparable to or even shorter(More)
Electron transport in model Si nanotransistors is examined by numerical simulation using a hierarchy of simulation methods, from full Boltzmann, to hydrodynamic, energy transport, and drift-diffusion. The on-current of a MOSFET is shown to be limited by transport across a low-field region about one mean-free-path long and located at the beginning of the(More)
The field of computational electronics began in a serious way when the so-called semiconductor equations were numerically solved in one, two, and three dimensions. The result was a new tool in the device engineer's toolkit, and the impact was profound. Much of the subsequent history of the field has consisted of working to improve the description of carrier(More)
This paper discusses the device physics of carbon nanotube field-effect transistors (CNTFETs). After reviewing the status of device technology, we use results of our numerical simulations to discuss the physics of CNTFETs emphasizing the similarities and differences with traditional FETs. The discussion shows that our understanding of CNTFET device physics(More)
Three impulse sources have been developed to cover a wide range of peak power, bandwidth and center frequency requirements. Each of the sources can operate in single shot, rep-rate, or burst modes. These devices are of rugged construction and are suitable for field use. This paper will describe the specifications and principals of operation for each source.(More)