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Damage introduced by dynamic secondary ion mass spectrometry ͑SIMS͒ depth profiling is studied. A silicon sample with a boron marker layer was depth profiled by dynamic SIMS. After subsequent annealing at 750 °C for 30 min, the SIMS sample was reanalyzed by plan-view transmission electron microscope ͑PTEM͒ and SIMS. PTEM images showed the presence of(More)
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