Marie Wintrebert-Fouquet

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Progress in the design of field effect transistor on hetero-structure GaN/In<sub>x</sub>Ga<sub>1-x</sub>N is reported in this paper. The transistor uses new principle for modulation of the channel conductivity based on tunnel injection of electrons or holes through hetero-junction. The vertical GaN/In<sub>x</sub>Ga<sub>1-x</sub>N hetero-structure is(More)
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