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Journals and Conferences
We present a numerical model for the analysis of the chirp dynamics of quantum-dot (QD) semiconductor laser under large signal current modulation. The model is based on the multipopulation rate equation formalism, and it includes all the peculiar characteristics of the active QD material such as the inhomogeneous broadening of the gain spectrum, the… (More)
This paper deals with the simulation of the emission characteristics of self-assembled semiconductor quantum dash (QDash) active materials, characterized by high length-to-width and width-to-height ratios of the dash size and by a wide spreading of the dash dimensions. This significant size fluctuation requires to compute numerically the corresponding… (More)
We present a time-domain traveling wave model for the simulation of InAs/GaAs quantum dot DFB lasers. The optical susceptibility of the quantum dot (QD) active material is represented through a series of numerical filters that account for the interplay between homogeneous and inhomogeneous broadening of the gain spectrum of the self-assembled QDs. We also… (More)
In this paper, we investigate with numerical simulations the rich multimode dynamics of quantum dot Fabry-Perot lasers. We have used a time-domain traveling-wave approach including the electron and hole carrier dynamics in the various quantum dot confined states, the inhomogeneous broadening of the complex gain spectrum, the polarization dynamics, and the… (More)
In this paper, a theoretical model based on rate equations is used to investigate static and dynamic behaviors of InAs-InP (113)B quantum-dot (QD) lasers emitting at 1.55 mum. More particularly, it is shown that two modelling approaches are required to explain the origin of the double laser emission occurring in QD lasers grown on both, GaAs and InP… (More)
A 22-GHz directly modulated 3-dB bandwidth could be obtained by 1.3-mm-long weakly laterally coupled distributed Bragg reflector lasers fabricated by focused ion beam lithography. In addition to a high bandwidth, the lasers show a stable emission spectrum with side-mode suppression ratios of more than 40 dB and output powers exceeding 20 mW.
The modulation bandwidth of InP based lasers was enhanced by utilizing higher order resonances in the detuned loading regime. With a new three-section design a modulation bandwidth of 37 GHz was obtained well beyond the relaxation frequency.
In this paper, a theoretical model is used to investigate the lasing spectrum properties of InAs-InP(113)B quantum dot (QD) lasers emitting at 1.55 mum. The numerical model is based on a multipopulation rate equations analysis. Calculations take into account the QD size dispersion as well as the temperature dependence through both the inhomogeneous and the… (More)
We present a numerical model for the calculation of the opto-electronic properties of a semiconductor InAs-InAlGaAs quantum dash active material including the presence of the wetting layer (WL), formed at the bottom of the dashes, and the quantum mechanical coupling among dashes caused by the high density of the InAs islands. The model calculates… (More)