Maria Cristina Vecchi

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IJalld-st.ruct urc, ollect s ha.ve been incorporated in the framework of {.he Spherical-IIarnlol~ics k;xpansion (S H E) of the Boltz~nann Transport Equat.ion (B T E) for ~lcctrons ill silicon [ I ] , using t.he densit,y of st.at.es (D O S) and the group velocity (C V) obt.ained from t,he full-band syst.em [2]. In t,his paper an impact-ionizat.ion model is(More)
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