Maria-Alexandra Paun

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Several Hall sensor configurations have been integrated in CMOS 0.35 μm technology and analyzed in terms of offset at room temperature and offset drift. We searched for the best geometry that would minimize the offset and its corresponding drift. The targeted specifications were ±30 μT for offset at room temperature and ±0.3 μT/°C for the drift. The(More)
Several Hall effect sensors were modeled and evaluated regarding the Hall voltage and sensitivity using 3D physical simulations. For accurate results the numerical offset and its temperature drift were analyzed. The versatility of the simulation allows various Hall sensor implementations. The simulation procedure could guide the designer in choosing the(More)
In this paper, the performance of CMOS Hall Effect Sensors with four different geometries has been experimentally studied. Using a characteristic measurement system, the cells residual offset and its temperature behavior were determined. The offset, offset drift and sensitivity are quantities that were computed to determine the sensors performance. The(More)
Five different Hall Effect sensors were modeled and their performance evaluated using a three dimensional simulator. The physical structure of the implemented sensors reproduces a certain technological fabrication process. Hall voltage, absolute, current-related, voltage-related and power-related sensitivities were obtained for each sensor. The effect of(More)
The present paper focuses on various aspects regarding Hall Effect sensors' design, integration, and behavior analysis. In order to assess their performance, different Hall Effect geometries were tested for Hall voltage, sensitivity, offset, and temperature drift. The residual offset was measured both with an automated measurement setup and by manual(More)
The effect of the structure scaling on the Hall Effect sensors performance (including offset values) is investigated. To this purpose, the Hall devices have been integrated in a regular bulk CMOS technology and tested for their main parameters. The comparative analysis is focused on three Hall cells (basic, L, XL), with progressive scaled up dimensions.(More)
This paper is intended to present an advanced technique to be used in solid-state power and energy meters, more specifically through the employment of the Hall effect sensors. From a qualitative point of view, an investigation into the sensing device is performed and geometrical consideration of the Hall cells onto the performance is analyzed. Different(More)
In this paper a gradual investigation of a particular Hall sensor in SOI (“Silicon-On-Insulator”) technology is presented. The most important parameters of a specific Hall cell, based on SOI structure, are evaluated through three-dimensional physical simulations. The fact that the depth of the active silicon layer in SOI integration process is(More)