Maria-Alexandra Paun

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Five different Hall Effect sensors were modeled and their performance evaluated using a three dimensional simulator. The physical structure of the implemented sensors reproduces a certain technological fabrication process. Hall voltage, absolute, current-related, voltage-related and power-related sensitivities were obtained for each sensor. The effect of(More)
The present paper focuses on various aspects regarding Hall Effect sensors’ design, integration, and behavior analysis. In order to assess their performance, different Hall Effect geometries were tested for Hall voltage, sensitivity, offset, and temperature drift. The residual offset was measured both with an automated measurement setup and by manual(More)
OBJECTIVE Accurate measurements of abdominal aortic aneurysms (AAAs) are required for surgical planning and monitoring over time. We have examined the feasibility of using a three-dimensional (3-D) ultrasound imaging system to derive quantitative measurements of interest from AAAs. METHODS A normal aorta, a small AAA, and an AAA repaired with an(More)
In this paper, the performance of CMOS Hall Effect Sensors with four different geometries has been experimentally studied. Using a characteristic measurement system, the cells residual offset and its temperature behavior were determined. The offset, offset drift and sensitivity are quantities that were computed to determine the sensors performance. The(More)
Several Hall effect sensors were modeled and evaluated regarding the Hall voltage and sensitivity using 3D physical simulations. For accurate results the numerical offset and its temperature drift were analyzed. The versatility of the simulation allows various Hall sensor implementations. The simulation procedure could guide the designer in choosing the(More)
The present paper focuses on presenting the temperature effects on Hall Effect sensors sensitivity behavior. To this purpose, an analysis of the factors affecting the sensors current-related sensitivity is performed, consisting of several pertinent considerations. An analytical investigation of the carrier concentration temperature dependence including the(More)
Several Hall sensor configurations have been integrated in CMOS 0.35 μm technology and analyzed in terms of offset at room temperature and offset drift. We searched for the best geometry that would minimize the offset and its corresponding drift. The targeted specifications were ±30 μT for offset at room temperature and ±0.3 μT/°C for the drift. The(More)
In this paper a gradual investigation of a particular Hall sensor in SOI (“Silicon-On-Insulator”) technology is presented. The most important parameters of a specific Hall cell, based on SOI structure, are evaluated through three-dimensional physical simulations. The fact that the depth of the active silicon layer in SOI integration process is(More)