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CD-SEM for 65-nm Process Node
OVERVIEW: Inspection equipment for 90-nm and subsequent process nodes is required to have not only improved observation ability, but also further improved measurement reproducibility as well. InExpand
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Evaluation of EUV mask defect using blank inspection, patterned mask inspection, and wafer inspection
The key challenge before EUVL is to make defect-free masks, for which it is important to identify the root cause of defects, and it is also necessary to establish suitable critical mask defect sizeExpand
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Application of review-SEM to high-resolution inspection for 3xnm nodes
TLDR
We developed the high-sensitivity fixed point inspection tool based on Review-SEM as the product accomplishment judgment tool for below 10nm size defects on critical size devices. Expand
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EB defect inspection of EUV resist patterned wafer for hp 32 nm and beyond
It is important to control the defect level of the EUV lithography mask because of pellicle-less. We studied the resist patterned wafer inspection method using EB inspection system. In this paper,Expand
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In-die overlay metrology method using defect review SEM images
TLDR
We have developed an in-die overlay measurement method based on SEM images. Expand
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Inspection-analysis Solutions for High-quality and High-efficiency Semiconductor Device Manufacturing
TLDR
This article presents an overview of the Hitachi Group’s IC inspection and analysis solutions that meet the increasingly diverse needs of chip manufacturers in supporting high-quality, high-efficiency production of semiconductor devices. Expand
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A novel electron beam-inspection technique for high-impedance contact plugs
We here present a novel electron beam inspection technique for non-annealed high impedance poly-Si plugs. At this new method, interval time between each electron beam scan is varied to enhance theExpand