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Low-frequency (LF) dispersive phenomena due to device self-heating and/or the presence of "traps" (i.e., surface state densities and bulk spurious energy levels) must be taken into account in the large-signal dynamic modeling of III-V field-effect transistors when accurate performance predictions are pursued, since these effects cause important deviations(More)
This article develops a map to analyze the dynamic forces that influence the structure and development of 3G (third generation) wireless communications value networks. The analysis builds on the Strategic Value Assessment Model (Fine, et al. utilizes a qualitative System Dynamics mapping approach. The map focuses on the driving forces affecting user(More)
Product or company names used in this set are for identification purposes only. Inclusion of the names of the products or companies does not indicate a claim of ownership by IGI Global of the trademark or registered trademark. Encyclopedia of multimedia technology and networking / Margherita Pagani, editor.-2nd ed. p. cm. Includes bibliographical references(More)
Within changing value networks, the profits and competitive advantages of participation reside dynamically at control points that are the positions of greatest value and/or power. The enterprises that hold these positions have a great deal of control over how the network operates, how the benefits are redistributed, and how this influences the execution of(More)
Advances in hardware, software, and audiovisual rendering technologies of recent years have unleashed a wealth of new capabilities and possibilities for multime-dia applications, creating a need for a comprehensive, up-to-date reference. The Encyclopedia of Multimedia Technology and Networking provides hundreds of contributions from over 200 distinguished(More)
A nonlinear empirical model is here adopted to model the cold-FET behaviour of a GaAs PHEMT, in the framework of a resistive mixer application. The model, purely mathematical and technology independent, is suitably identified in the device operative region of interest and is validated in large-signal conditions by exploiting a measurements setup based on(More)